Fabian Bufler: Catalogue data in Autumn Semester 2019 |
Name | PD Dr. Fabian Bufler |
Field | Theoretische Festkörperphysik und Bauelementsimulation |
Address | IMEC Kapeldreef 75 R&D Nanoelectronics 3001 Leuven BELGIUM |
Department | Information Technology and Electrical Engineering |
Relationship | Privatdozent |
Number | Title | ECTS | Hours | Lecturers | |
---|---|---|---|---|---|
227-0158-00L | Semiconductor Devices: Transport Theory and Monte Carlo Simulation | 4 credits | 2G | F. Bufler | |
Abstract | The lecture combines quasi-ballistic transport theory with application to realistic devices of current and future CMOS technology. All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques to solve the Boltzmann equation are introduced. In the exercises advanced devices such as FinFETs and nanosheets are simulated. | ||||
Objective | The aim of the course is a fundamental understanding of the derivation of the Boltzmann equation and its solution by Monte Carlo methods. The practical aspect is to become familiar with technology computer-aided design (TCAD) and perform simulations of advanced CMOS devices. | ||||
Content | The covered topics include: - quantum mechanics and second quantization, - band structure calculation including the pseudopotential method - phonons - derivation of the Boltzmann equation including scattering in the Markov limit - stochastic Monte Carlo techniques to solve the Boltzmann equation - TCAD environment and geometry generation - Stationary bulk Monte Carlo simulation of velocity-field curves - Transient Monte Carlo simulation for quasi-ballistic velocity overshoot - Monte Carlo device simulation of FinFETs and nanosheets | ||||
Lecture notes | Lecture notes (in German) | ||||
Literature | Further reading will be recommended in the lecture. | ||||
Prerequisites / Notice | Knowledge of quantum mechanics is not required. Basic knowledge of semiconductor physics is useful, but not necessary. |